| 型號(PratNumber) | P5MND6P5 |
| 數(shù)量(QTY.) | 10000 |
| 廠家(Brand) | ERIS |
| 封裝(Package) | PPAK5X6 |
| 批號(DC.) | 23+ |
| 聯(lián)系人(contact) | 顏先生/William |
| 電話(contact) | 0755-82170220,21001680 |
| PDF(PDF.) |
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| 詢價(jià)(Inquire) |
ERIS P5MND6P5 PPAK5X6 21+
General Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
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